| PART |
Description |
Maker |
| AS8ER128K32Q-250/XT AS8ER128K32Q-250/883C AS8ER128 |
128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY 128K X 32 EEPROM 5V MODULE, 250 ns, CQFP68
|
Austin Semiconductor, Inc
|
| 28C011TRT1FS 28C011TRPFS 28C011TRPFS-20 28C011TRPF |
1 Megabit (128K x 8-Bit) EEPROM 1兆位128K的8位）的EEPROM
1 Megabit (128K x 8-Bit) EEPROM 1兆位28K的8位）的EEPROM
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
CONNECTOR ACCESSORY
POT 100K OHM THUMBWHEEL CERM ST
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http://
NXP Semiconductors N.V.
Maxwell Technologies, Inc
|
| AS8ER128K32_03 AS8ER128K32 AS8ER128K32Q-150_883C A |
128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY
|
AUSTIN[Austin Semiconductor]
|
| AS8ERLC128K32SQB-300_IT AS8ERLC128K32SQB-300_Q AS8 |
128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS
|
Austin Semiconductor
|
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http://
Maxwell Technologies, Inc
|
| IHB2EB1R0M IHB6BV6R8M IHB2BV121K IHB6BV123K IHB2BV |
General Fixed Inductor, 1 ELEMENT, 1 uH, GENERAL PURPOSE INDUCTOR, HALOGEN FREE AND ROHS COMPLIANT
General Fixed Inductor, IND,WIREWOUND,6.8UH,20% TOL,20% -TOL
General Fixed Inductor, IND,WIREWOUND,120UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,12MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,8.2UH,20% TOL,20% -TOL
IND FLTR 33UH 20% 1KHZ 13.5A RDL - Bulk
General Fixed Inductor, IND,WIREWOUND,390UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,3.3UH,20% TOL,20% -TOL
General Fixed Inductor, IND,WIREWOUND,8.2MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,820UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,1.2MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,100UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,22UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,10MH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,18UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,150UH,10% TOL,10% -TOL
General Fixed Inductor, IND,WIREWOUND,1.5MH,10% TOL,10% -TOL
|
Vishay Dale
|
| WE128K32N-120G2TC WE128K32N-120G2TCA WE128K32N-120 |
Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:150 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:200 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:140 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:300 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:250 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:240 ns; 128K x 32 EEPROM module, SMD 5962-94585
|
White Electronic Designs
|
| X28C010FI-20 X28C010FMB-15C7808 X28C010FMB-15C7619 |
CAP 6.8PF 100V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN
Controller IC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Controller IC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500
5 Volt, Byte Alterable EEPROM 128K X 8 EEPROM 5V, 120 ns, CDIP32
CAP 6.8PF 100V .25 PF NP0(C0G) SMD-0603 TR-13 PLATED-NI/SN 128K X 8 EEPROM 5V, 250 ns, CDFP32
5 Volt, Byte Alterable EEPROM 128K X 8 EEPROM 5V, 250 ns, CPGA36
5 Volt, Byte Alterable EEPROM 128K X 8 EEPROM 5V, 200 ns, CDSO32
|
Intersil Corporation
PROM
Intersil, Corp.
|
| 25C256 CAT25C256 25C128 CAT25C128 CAT25C256S16-1.8 |
256K SPI serial CMOS EEPROM 1.8-6.0V
128K SPI serial CMOS EEPROM 2.5-6.0V
SPI Serial EEPROM SPI串行EEPROM
128K/256K-BitSPISerialCMOSE2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
128K SPI serial CMOS EEPROM 1.8-6.0V
256K SPI serial CMOS EEPROM 2.5-6.0V
128K/256K-Bit SPI Serial CMOS E2PROM
|
http://
STMicroelectronics N.V.
Semtech, Corp.
Abracon, Corp.
CatalystSemiconductor
CATALYST[Catalyst Semiconductor]
|
| MEM8128VM-15 MEM8128VI-20 |
128K X 8 EEPROM 5V, 150 ns, CDXA32
128K X 8 EEPROM 5V, 200 ns, CDXA32
|
|
| LE24LB1283 |
Two Wire Serial Interface EEPROM (128k EEPROM)
|
Sanyo Semicon Device
|
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